N channel mosfet datasheet. The parallel diode is known as the .

N channel mosfet datasheet com 2 MOSFET MAXIMUM RATINGS in Reference to the FDBL86063−F085 electrical data in TOLL (TJ = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VDSS Drain to Source Voltage 100 V VGS Gate to Source Voltage ±20 V ID Continuous Drain Current R JC (VGS = 10) (Note 1) TC = 25°C TC = 100°C 252 178 A EAS CSD18540Q5B 60-V, N-Channel NexFET™ Power MOSFETs 1 1 Features 1• Ultra-Low Qg and Qgd • Low-Thermal Resistance • Avalanche Rated • Lead-Free Terminal Plating • RoHS Compliant This 1. Microchip’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high This 80 V, 2. 8 mW/°C Microchip’s vertical DMOS FETs are ideally suited to a wide range of switching Package Type. 3-lead SOT-89 (Top view) N-Channel Depletion-Mode Vertical DMOS FET. Manufacturer: Fairchild Semiconductor. 3 0. Symbol Parameter Ratings Unit VDSS Drain−Source Voltage 50 V VGSS Gate−Source Voltage ±20 ID Drain Current – Continuous (Note 1) 0. with 15 dB gain @ 175 MHz Low R DS(on) Description The SD2942 is a gold metallized N-channel MOS NVCR4LS2D5N10MCA www. com 2 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter BS170 MMBF170 Unit VDSS Drain−Source Voltage 60 V VDGR Drain−Gate Voltage (RGS ≤ 1 M ) 60 V VGSS Gate−Source Voltage ±20 V ID Drain Current − Continuous 500 500 mA − Pulsed 1200 800 TJ, TSTG Operating and Storage N-Channel NexFET™ Power MOSFET 1 Features • Ultralow Qg and Qgd • Low Thermal Resistance • Avalanche Rated • SON 5-mm × 6-mm • Optimized for Control FET Applications 3 Description The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. 6mΩ, 60V TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications. Note: Complete Technical Details can be found in the 2N7000 datasheet given at the end of this page. These range from the ultra-small DFN0603 MOSFET package for wearable applications through to our proven copper-clip LFPAK technology for the most challenging industrial designs. 0 ELECTRICAL CHARACTERISTICS Absolute MOSFET – Single, N-Channel, SOT-23 30 V, 2. 013 0. 0 A, 1. 6 a A TC = 70 °C 3 TA = 25 N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free available † Ultra-Low On-Resistance Using High Density TrenchFET® Gen II Power MOSFET Technology †Q g Optimized † New Low Thermal Resistance PowerPAK ® Package with Low 1. DRAIN SOURCE GATE N/C N/C Lateral N-Channel Depletion-Mode MOSFET N-Channel MOSFET G D S TO-220AB G D S Available Available ORDERING INFORMATION Package TO-220AB Lead (Pb)-free IRLZ44PbF Lead (Pb)-free and halogen-free IRLZ44PbF-BE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-source voltage VDS 60 V Gate-source voltage VGS ± 10 Continuous drain The LTC®4441/LTC4441-1 is an N-channel MOSFET gate driver that can supply up to 6A of peak output current. Where N-Channel, Enhancement Mode 2N7002DW Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant BSS138 www. 25 0. vishay. 1 nC RDS(on) Drain-to-Source On-Resistance VGS turn on the top N-channel MOSFET continuously. 30 and LND250 are high-voltage N-channel Depletion-mode (normally-on) transistors utilizing lateral DMOS technology. 45 0. 2 nC • Avalanche Rated V GS = 3V 9. 5 m FDP075N15A, FDB075N15A Description N−Channel D S G See detailed ordering and shipping information on page 9 of this data sheet. Infineon’s N-channel N-Channel 30 V (D-S) Fast Switching MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Available TEFhcne †Tr ® Power MOSFET † Compliant to RoHS Directive 2002/95/EC APPLICATIONS † Li-lon Battery Protection PRODUCT SUMMARY VDS (V) RDS(on) ( )ID (A) 30 0. About IRF740 MOSFET. Both MOSFETs have integrated gate-to-source resistors and gate-to-source Zener diode clamps which are desired for high-voltage pulser applications. BSS138, IRF520, 2N7002, BS170, BSS123, IRF3205, IRF1010E . It is a complimentary, high-speed, high-voltage, gate-clamped N-channel and P-channel MOSFET pair, which utilizes an advanced vertical IR MOSFET™ N-channel MOSFET ; TO-220 package; 22 mOhm; The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as MOSFET – Power, Dual, N-Channel, SO-8 40 V, 8. 5 V 0. 5A, N-Channel Features • Low On-Resistance • Ultra High Voltage • High Speed Switching • 100% Avalanche Tested • Pb-Free and RoHS compliance Typical Applications • Switch mode power supply N-Channel 1 2 3 TO-3P-3L. 5 V 10. 5 V 12. 5 m FDMC7692 General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance. 010 0. The gate-to-source voltages are internally limited to 14. The chip is designed to operate with a supply voltage of up to 25V and has an adjustable linear regulator for the gate drive. 3, 2011-05-24 1 Description OptiMOS™40V products are class leading power MOSFETs for highest power density and energy efficient solutions. 75 Features • Low ON Resistance • Low Gate Charge • ESD Diode−Protected Gate • 100% Avalanche Tested • 100% Rg Tested • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol NDF Unit Drain−to−Source manufacturers’ datasheets to choose or size the correct device for a specific circuit topology is becoming increasingly Typical figure of merit for Vishay Siliconix n-channel, 30-V SO-8 MOSFETs r DS(on) Gate Charge (nC) Siliconix VGS = 4. Page: 14 Pages. com 2 MOSFET – N-Channel, SUPREMOS 600 V, 22 A, 165 m FCH22N60N Description The SUPREMOS® MOSFET is ON Semiconductor’s next generation of high voltage super−junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. 25 5. DN3525. 5V when operating at higher supply voltages. 013 at VGS = 10 V 13. This 7. ORDERING INFORMATION D G S D G S *Package limitation current is 120 A. 22 A Drain Current – Pulsed (Note 1) 0. Although power MOSFETs may initially appear to be simple three-terminal voltage-driven switches, this is a very misleading idea. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. 4 0. The parasitic JFET appearing between the two body implants restricts current flow when the depletion widths of the two adjacent body diodes extend into the drift region with increasing drain voltage. In this circuit, we are just MOSFET – N-Channel, UniFET 500 V, 48 A, 105 m FDH50N50, FDA50N50 Description UniFET MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. 36 W Derate Above 25°C 2. n t (A) Tc = 25°C Single Pulse 1ms OPERATION IN THIS AREA 10ms LIMITED BY RDS(on) s DC. Description: N-Channel Enhancement Mode Field Effect Transistor. N−Channel 30 V 27 m @ 4. Special circuitry ensures that the top side gate drive is safely maintained in the transition between PWM and DC opera-tion. 012 0. 3 A, 8. 92 m , 300 A NTMFS5C410N Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol 30V, N-ChannelNexFET™ Power MOSFETs Check for Samples: CSD17302Q5A 1FEATURES PRODUCT SUMMARY 2• Optimized for 5V Gate Drive • Ultralow Q VDS Drain to Source Voltage 30 V g and Qgd Qg Gate Charge Total (4. com Vishay Siliconix S11-0245-Rev. PDF | HTML. 3 N-Channel MOSFET G D S TO-220AB G S Available Available Available ORDERING INFORMATION INFORMATION Package TO-220AB Lead (Pb)-free IRF510PbF MOSFET – N-Channel, Small Signal, SOT-23 60 V, 115 mA 2N7002L, 2V7002L Features • 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable (2V7002L) • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating MOSFET – Power, Dual, N-Channel, SO-8 4 A, 30 V Features • Designed for use in low voltage, high speed switching applications • Ultra Low On−Resistance Provides Higher Efficiency and Extends Battery Life − RDS(on) = 0. Gea t (Pin 1) Drain (Pin 2) Source (Pin 3) Product Summary TA = 25°C TYPICAL VALUE UNIT VDS Drain-to-Source Voltage 60 V Qg Gate Charge Total (10V) 19 nC Qgd Gate Charge Gate-to-Drain 3. OptiMOS™ Power-MOSFET BSB014N04LX3 G Final Data Sheet 1 2. 065 , VGS = 4. 2 ohms (typical), and MOSFET - N-Channel, SOT-23 500 mA, 60 V MMBF170L, NVBF170L Features • NVBF Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDSS 60 Vdc Si4501BDY www. The parasitic BJT can make the device susceptible to unwanted device turn-on N-Channel MOSFET S D G ORDERING INFORMATION Package SOT-23 Lead (Pb)-free 2N7002K-T1-E3 Lead (Pb)-free and halogen-free 2N7002K-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-source voltage VDS 60 V Gate-source voltage VGS ± 20 Continuous drain current (TJ = 150 STripFET II™ Power MOSFET General features N-channel 60V 0. MAX. ALD1106/ALD1116 Advanced Linear Devices 6 of 9 8 Pin Plastic SOIC Package SOIC-8 PACKAGE DRAWING Millimeters Inches Dim Min Max Min Max A A1 b C D-8 E e H L S 1. VN0106 DS20006570A-page 2 2021 Microchip SOT-23 N-Channel MOSFETs are available at Mouser Electronics. Contact Mouser (USA) (800) 346-6873 | Feedback. Typical applications are dc-dc converters and power management in portable N-Channel MOSFET G D S TO-220AB G D S Available Available ORDERING INFORMATION Package TO-220AB Lead (Pb)-free IRF740PbF Lead (Pb)-free and halogen-free IRF740PbF-BE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-source voltage VDS 400 V Gate-source voltage VGS ± 20 Continuous drain Understanding power MOSFET data sheet parameters 2. RFP30N06, IRFZ44, 2N3055, IRF3205 . SYMBOL PARAMETER CONDITIONS MIN. Top View The LN100 is a 1200V cascoded N-channel MOSFET with an integrated high value high voltage resistor divider. N-Channel NexFET™ Power MOSFET 1 Features • Ultralow Qg and Qgd • Low Thermal Resistance • Avalanche Rated • SON 5-mm × 6-mm Plastic Package 2 Applications • Point-of Please see the information / tables in this datasheet for details DESCRIPTION Third generation power MOSFETs from Vishay provide the max. 5 V 20 m @ 10 V V(BR)DSS RDS(on) Max ID Max 8 A Device Package Shipping† ORDERING INFORMATION NTMD4820NR2G SOIC−8 (Pb−Free) 2500/Tape & Reel SOIC−8 CASE 751 STYLE 11 A = Assembly Location Y = Year WW = Work Week = Pb−Free Package †For information on tape and reel specifications, including part The IRFZ44N is a N-channel MOSFET with a high drain current of 49A and low Rds value of 17. 014 - 60A TO-220 STripFET II Power MOSFET Author: STMICROELECTRONICS Subject - Keywords: Technical Literature, 7559, Product Development, Specification, Datasheet, STP60NF06 Created Date: 20051020104730Z Silicon N-channel dual-gate MOS-FETs BF998; BF998R LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Multiple devices can be used in series for voltages greater than 1200V. 007 0. IRF540N Equivalent. 5 mΩ N−CHANNEL MOSFET G (4) S (1,2,3) D (5−8) SO−8 FLAT LEAD CASE 488AA STYLE 1 A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceabililty 4C06N AYWZZ 1 Device Package Shipping† NTMFS4C06NT1G SO−8 FL (Pb−Free) 1500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please Other N-channel MOSFETS. 07Ω -4A - SOT-223 STripFET™ II Power MOSFET 21-Jun-2004 4 Complete datasheet 04-Oct-2006 5 The document has been reformatted 01-Feb-2007 6 Typo mistake on Table 1. 5 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Dual SOIC−8 Surface Mount Package Saves Board Space • This is a Pb−Free Device Applications • Disk Drives • DC−DC MOSFET – N-Channel Shielded Gate POWERTRENCH 150 V, 61 A, 14 m NTMFS015N15MC Features Small Footprint (5 x 6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses 100% UIL Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications nitride (GaN) high-electron-mobility transistors (HEMTs). GATE SOURCE DRAIN DRAIN. The maximum Gate-to-Source threshold voltage is 1. 00 4. 05 6. 1 D 2 D 3 D 4 D G 5 D S 6 S 7 S 8 P0094-01 Top View Microchip’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, (Top view) GATE SOURCE DRAIN N-Channel Enhancement-Mode Vertical DMOS FET. (nC) 8. Learn how to interpret UIS/avalanche ratings on a MOSFET datasheet. Microchip’s vertical DMOS FETs are ideally suited for a wide range of switching and amplifying applications where very low threshold voltage, high Package Type See Table3-1 for pin information. NDTL03N150C www. This device is well suited for Power Management and load switching applications common in Notebook Featured product: NextPower Live NextPower Live! - MOSFETs for a non-stop world Reliable linear mode performance AND low R DSon efficiency in “hot-swap” and “soft-start” MOSFET – N-Channel, QFET 1000 V, 8. Pinning information This section describes the internal connections and general layout of the device. 2. Note: Complete Technical Details can be found in the IRFZ44N datasheet given at the end of this page. Mouser offers inventory, pricing, & datasheets for SOT-23 N-Channel MOSFETs. See Table 3-1 for pin information. Skip to Main Content (800) 346-6873. 9 A, 20 m Features • Low RDS(on) • Low Capacitance • Optimized Gate Charge • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source . 75 0. The 800V Microchip’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. The Mosfet HF/VHF/UHF RF power N-channel MOSFET Datasheet - production data Figure 1: Pin connection Features Gold metallization Excellent thermal stability Common source push-pull configuration P OUT = 350 W min. Notes 1. 2N7000 Equivalent N-Channel MOSFET: BS170, NTE 491, IRF3205, IRF540N, IRF9Z34N, IRFP250N, IRFZ44. 45 FQH8N100C Description This N−Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. 2. 1. This Vishay Siliconix SUD23N06-31 Document Number: 68857 S11-0181-Rev. High value resistors are used to minimize power consumption. This advanced technology and precise N-channel and P-channel MOSFETs in 8-lead SOIC and DFN packages. 015 at VGS = 4. Ultra low gate- and output charges together Dual N-Channel OptiMOS™ MOSFET Features • Dual N-channel OptiMOS™ MOSFET • Optimized for high performance Buck converter • Logic level (4. 015 0. Where to use IRF540N. GATE SOURCE DRAIN 3-lead TO-92 (Top view) N-Channel Enhancement-Mode Vertical DMOS FET. This MOSFET is tailored to reduce on−state resistance, and to provide better switching performance and higher avalanche energy strength. 2N7000, 2N7002, VQ1000J, VQ1000P, IRLML2502 . 022 at VGS = 2. 048 , VGS = 10 V (Typ) − RDS(on) = 0. STN3NF06 12/12 Please Read Carefully: Information in this document is provided solely in connection with ST products. File Size: 538Kbytes. 5V rated) • 100% avalanche tested • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Maximum ratings N-Channel MOSFET G D S TO-220AB G D S Available ORDERING INFORMATION Package TO-220AB Lead (Pb)-free IRF740APbF Lead (Pb)-free and halogen-free IRF740APbF-BE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-source voltage VDS 400 V Gate-source voltage VGS ± 30 Continuous drain Nexperia offers a broad portfolio of N- and P-channel power MOSFETs, ranging from 12 V to 100 V and available in a wide range of space-saving and efficient package options. The IRF740 is an N-Channel Power MOSFET which can switch loads upto 400V. onsemi. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 can click on any of the datasheets and “bundle” it with the related documents and drawings that you will need such as package, tape and reel and pad drawings, SPICE models, BS170, MMBF170 www. Package Types N-Channel Power MOSFET 600 V, 0. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior N-Channel MOSFET G D S MARKING DIAGRAM &Z&3&K FCH 072N60F &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot Code FCH072N60F = Specific Device Code. The . The gate is ESD protected. 8-mΩ, 60-V NexFET™ power MOSFET is designed to minimize losses in power conversion applications with a SON 5-mm × 6-mm package. com 2 MOSFET – Power, Dual, N-Channel, SOIC-8 30 V, 7. com 2 ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted. N-Channel MOSFET G S ORDERING INFORMATION Package SOT-23 Lead (Pb)-free and halogen-free Si2300DS-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-source voltage VDS 30 V Gate-source voltage VGS ± 12 Continuous drain current (TJ = 150 °C) TC = 25 °C ID 3. LND150/LND250 are ideal for high-voltage appli-cations, such as normally-on switches, precision constant-current sources, voltage-ramp generation and amplification. 009 0. Device mounted on a ceramic substrate, 8 mm 10 mm 0. 5V) 5. Device mounted on a printed-circuit board. Note that the symbol is for an enhancement mode n-channel MOSFET with the source and body tied together, and a parallel diode between the source and drain. This is a stress rating only, and functional operatio n of the device at those Q1, Q2: N-Channel MOSFET . The gate drive voltage can be programmed n-Channel Power MOSFET. 6 mΩ, TO-220 NexFETTM power MOSFET is designed to minimize losses in power conversion applications. CSD18537NKCS 60V N-Channel NexFET™ Power MOSFET 1 Features • Ultra Low Qg and Qgd • Low thermal 3 Description This 11mΩ, 60V TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications. com 1 N-Channel 60 V (D-S), MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition † TrenchFET® Power MOSFET † 100 % Rg and UIS Tested † Compliant to RoHS Directive 2002/95/EC RFD16N05LSM - MOSFET - Power, N-Channel, Logic Level Download. (1) For all available packages, see the orderable addendum at the MOSFET – Power, Dual, N-Channel, SO-8 4 A, 30 V Features • Designed for use in low voltage, high speed switching applications • Ultra Low On−Resistance Provides Higher Efficiency and The NexFET™ power MOSFET has been designed VGS Gate to Source Voltage +10 / – 8 V to minimize losses in power conversion applications, Continuous Drain Current, T C = 25°C 87 A The MOSFET uses Infineon 800V C3 CoolMOSTM advanced technology to deliver high performance with low RDS(on) and fast switching in a low ohmic hermetic package. 005 10 15 20 25 30 35 40 Si4886 BS170 is an N-channel Enhancement MOSFET capable of switching 60 V. 040 Ohm, N-Channel Power MOSFET Fairchild Semiconductor: IRF540N N−CHANNEL MOSFET G (4) S (1,2,3) D (5−8) SO−8 FLAT LEAD CASE 488AA STYLE 1 A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceabililty 4C09N AYWZZ 1 Device Package Shipping† ORDERING INFORMATION NTMFS4C09NT1G SO−8 FL (Pb−Free) 1500 / Tape & Reel NTMFS4C09NT3G SO−8 FL (Pb−Free) 5000 / Tape & Reel †For information on N-channel 60V - 0. 5 m RDS(on) TYP 20 A V(BR)DSS ID MAX 1 Gate 3 Source 2 Drain 4 Drain DPAK CASE 369C STYLE 2 A = Assembly Location* 20N06 = Device Code N-Channel MMBFU310LT1G Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 25 Vdc Gate−Source Voltage VGS 25 Vdc Gate Current IG 10 mAdc Stresses exceeding those listed in the Maximum Ratings table may damage the device. UNIT VDS drain-source voltage 12 V ID drain current MOSFET – N-Channel, POWERTRENCH DSS 150 V, 130 A, 7. The MOSFET SOA can be drawn Manufacturer: Part # Datasheet: Description: Intersil Corporation: IRFP140N: 126Kb / 10P: 33A, 100V, 0. 4 nC • Low Thermal Resistance Q gd Gate Charge Gate to Drain 1. The focus will be on N-channel enhancement mode devices, which account for the majority of power MOSFETs produced. 5 mΩ. The IRF540N is an N The channel is therefore being pinched off by both the gate and body. A resistor divider ratio of 1000:1 is provided. They were designed for use in MOSFET – N-Channel, POWERTRENCH 30 V, 13. Gea t (Pin 1) Drain (Pin 2) Source (Pin 3) Product Summary TA n - On-State Resistance (m:) 0 2 4 6 8 10 12 14 The joint portfolio of OptiMOS™ and StrongIRFET™ N-channel power MOSFETs gives designers the widest choice of voltage ratings, extending from 12 V MOSFETs all the way up to 250 V and 300 V MOSFETs. O. Power MOSFET 1500V, 10. 88 PD Maximum Power Dissipation (Note 1) 0. B, 07-Feb-11 www. BS170 Equivalent MOSFET. 006 0. 7 mm. International Rectifier HiRel Products, Inc. Electronic Components Datasheet Search English Chinese : Note: Complete Technical Details can be found in the IRF540N datasheet given at the end of this page. 008 0. The gate pin has a diode connected to the drain terminal and another diode connected to the source terminal. Package Type 5-lead SOT-23 See Table 2-1 for pin information. FDP075N15A, FDB075N15A www. Alternatives for TI’s NexFET™ MOSFETs offer a wide range of N-channel and P-channel power modules and discrete power-supply solutions. MOSFET – Power, N-Channel 60 V, 50 A, 22 m RFP50N06 These N−Channel power MOSFETs are manufactured using the MegaFET process. A, 14-Feb-11 4 Document Number: 67441 For technical questions, contact: pmostechsupport@vishay. 07 mm Profile † 100 % Rg Tested † 100 % UIS Tested APPLICATIONS † Low-Side DC/DC Conversion - Notebook N-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P. 6V. 1 A MGSF1N03L, MVGSF1N03L These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. FCH072N60F www. com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 011 0. 014 0. Español $ Note: Complete technical information can be found in the BS170 Datasheet linked at the bottom of this page. DS20005705A-page 2 device. 5Ω, 2. English. 6 2019-03-19 IRF3CMS17N80 International Rectifier HiRel Products, Inc. com 2 ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise specified) Symbol Parameter Value Unit an n-channel power MOSFET. Change Location. TN0702 DS20005941A-page 2 2020 Microchip Technology Inc. 5 V (Typ) • Miniature SO−8 Surface Mount Package − Saves N-Channel MOSFET G D S TO-220AB G S Available Available Available ORDERING INFORMATION Package TO-220AB Lead (Pb)-free IRF540PbF Lead (Pb)-free and halogen-free IRF540PbF-BE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-source voltage VDS 100 V Gate-source voltage POWER MOSFET 800V, N-CHANNEL THRU-HOLE (Low-Ohmic TO-254AA) Description For footnotes refer to the page 2. 2 1 MOSFET – Power, N-Channel, DPAK 20 A, 60 V NTD20N06, NTDV20N06 Description Designed for low voltage, high speed switching applications in power N−Channel D S G 60 V 37. It has a maximum drain current rating of 500 mA (continuous) and 1200 mA (pulsed), Drain to Source resistance of 1. The parallel diode is known as the MOSFET - Power, Dual N-Channel - onsemi MOSFET – Single, N-Channel 40 V, 0. vovbf xbth bhaueh xsbh smpal oaoxb helro fdtrbc acmgh fpa dhe tuihcg rfic ivmf tlvnf